Role of electron injection on vertical leakage in GaN-on-Si epitaxial layers
Role of electron injection on vertical leakage in GaN-on-Si epitaxial layers
复制标题
DOI:
10.1016/j.spmi.2019.01.028
复制
发表时间:
2019-04
影响因子:
3.1
通讯作者:
Chunyan Song;Xuelin Yang;P. Ji;Tang Jun;Anqi Hu;Yuxia Feng;Wei Lin;W. Ge;Zhijian Yang;F. Xu;B. Shen
中科院分区:
文献类型:
--
作者:
Chunyan Song;Xuelin Yang;P. Ji;Tang Jun;Anqi Hu;Yuxia Feng;Wei Lin;W. Ge;Zhijian Yang;F. Xu;B. Shen