Fabrication of CaWO4:Eu3+ Thin Films via Electrochemical Methods Assisted by a Novel Post Treatment
Fabrication of CaWO4:Eu3+ Thin Films via Electrochemical Methods Assisted by a Novel Post Treatment
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DOI：
10.4028/www.scientific.net/amr.194-196.2458
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发表时间：
2011-02
期刊：
影响因子：
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通讯作者：
L. Chen;Yuanhong Gao;J. Yuan;Qing Hua Zhang;Yanfen Yin;Chunliang Wang
中科院分区：
文献类型：
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作者：
L. Chen;Yuanhong Gao;J. Yuan;Qing Hua Zhang;Yanfen Yin;Chunliang Wang
直接通过电化学方法制备稀土掺杂CaWO_4薄膜是不可能的。提出了一种新的后处理工艺，在室温下制备了CaWO 4：Eu 3+薄膜。采用X射线衍射、X射线光电子能谱、分光光度计等测试手段对其物相、组成和发光性能进行了表征。结果表明：Eu 3+掺杂的CaWO 4薄膜为四方相，近表面区域的Eu含量远高于体相;在310 nm激发下，Ca 0. 9 WO 4：Eu 0. 13+薄膜在616 nm处有一尖锐的发射峰。
It is hardly possible to obtain rare earth doped CaWO4 thin films directly through electrochemical techniques. A novel post processing has been proposed to synthesize CaWO4:Eu3+ thin films at room temperature. X-ray diffraction, X-ray photoelectron spectrometry, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that Eu3+-doped CaWO4 films have a tetragonal phase; the content of Eu in the near surface region is much higher than that of the bulk; under the excitation of 310 nm, a sharp emission peak at 616 nm has been observed for Ca0.9WO4:Eu0.13+ thin films.