RAMAN-SCATTERING IN ALLOY SEMICONDUCTORS - SPATIAL CORRELATION MODEL
RAMAN-SCATTERING IN ALLOY SEMICONDUCTORS - SPATIAL CORRELATION MODEL
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DOI：
10.1103/physrevlett.52.1822
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发表时间：
1984-01-01
影响因子：
8.6
通讯作者：
POLLAK, FH
中科院分区：
文献类型：
--
作者：
PARAYANTHAL, P;POLLAK, FH
利用高斯相关函数的“空间相关”模型，我们首次定量解释了合金势波动引起的一阶纵向光学声子拉曼光谱的增宽和不对称性。研究的系统是代表性的合金半导体Ga 1− x Al x As/GaAs和Ga 0.47 In 0.53 As/InP。这种分析提供了重要的洞察合金电位波动的微观本质。
Using a" spatial correlation" model with a Gaussian correlation function we have for the first time quantitatively explained the broadening and asymmetry of the first-order longitudinal-optic phonon Raman spectrum induced by alloy potential fluctuations. The systems studied were the representative alloy semiconductors Ga 1− x Al x As/GaAs and Ga 0.47 In 0.53 As/InP. This analysis provides important insights into the microscopic nature of the alloy potential fluctuations.