Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology
Fabrication of β-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology
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DOI：
10.1364/ome.4.001067
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发表时间：
2014-05-01
影响因子：
2.8
通讯作者：
Tang, Weihua
中科院分区：
文献类型：
--
作者：
Guo, Daoyou;Wu, Zhenping;Tang, Weihua
采用激光分子束外延技术在(0001)蓝宝石衬底上沉积了β-氧化镓。通过对生长参数的优化，(2)获得了超大气压取向的β-Ga2O_3薄膜。紫外-可见吸收光谱表明，所制备的β-Ga2O_3薄膜具有良好的日盲紫外线(UV)特性，禁带宽度为5.02 eV。利用高质量的β-Ga2O3膜制作了金属-半导体-金属结构的光电探测器原型。该器件在254 nm紫外光照射下表现出明显的光响应，这表明该器件在日盲光探测器中具有潜在的应用前景。
Laser molecular beam epitaxy technology has been employed to deposit beta-gallium oxide (beta-Ga2O3) on (0001) sapphire substrates. After optimizing the growth parameters, (2) overbar01)-oriented beta-Ga2O3 thin film was obtained. Ultraviolet-visible absorption spectrum demonstrates that the prepared beta-Ga2O3 thin film shows excellent solar-blind ultraviolet (UV) characteristic with a band gap of 5.02 eV. A prototype photodetector device with a metal-semiconductor-metal structure has been fabricated using high quality beta-Ga2O3 film. The device exhibits obvious photoresponse under 254 nm UV light irradiation, suggesting a potential application in solar-blind photodetectors.(C) 2014 Optical Society of America