Comprehensive evaluation of GaN GIT in low- and high-frequency bridge leg applications
Comprehensive evaluation of GaN GIT in low- and high-frequency bridge leg applications
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GaN GIT 在低频和高频桥臂应用中的综合评估
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
J. Kolar
中科院分区：
文献类型：
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作者：
D. Bortis;O. Knecht;D. Neumayr;J. Kolar
在功率额定为几千瓦的电力电子应用中，宽带隙半导体正越来越多地取代最先进的硅MOSFET。阻挡电压额定值高达1200V的SiCMOSFET和低压GaN器件从几年前就已经在市场上上市了。现在，600V GaN器件也进入了市场，在许多400V的关键应用中，这是一种经济高效的解决方案，以提高系统的可实现效率或功率密度的性能。除了所采用的半导体器件外，合适的栅极驱动电路的设计也很重要。本文提出了一种用于驱动GaN开关的简单可靠的栅极驱动电路。此外，将所提出的栅极驱动用于评估GaN栅极注入晶体管(GIT)在软开关和硬开关条件下的开关性能，为进一步优化图腾极转换器系统提供了依据。
In power electronics applications with power ratings around several kilowatts, wide band gap semiconductors are more and more replacing state-of-the-art Si MOSFET. SiC MOSFETs with blocking voltage rating up to 1200V and low-voltage GaN devices are already commercially available on the market since a couple of years. Now also 600V GaN devices are entering the market, which are a cost-effective solution in many 400V key applications in order to increase the system performance in terms of achievable efficiencies or power density. Besides the employed semiconductor devices also the design of the appropriate gate drive circuit is important. In this paper a simple and reliable gate drive circuit for driving GaN switches is presented. In addition, the proposed gate drive is used to evaluate the switching performance of a GaN Gate Injection Transistor (GIT) under soft- and hard-switching condition, which provides a basis for further optimization of totem-pole converter systems.