Fabrication of heteroepitaxial Si films on sapphire substrates using mesoplasma CVD
Fabrication of heteroepitaxial Si films on sapphire substrates using mesoplasma CVD
复制标题
DOI：
10.1016/j.surfcoat.2006.07.134
复制
发表时间：
2007-02-26
影响因子：
5.4
通讯作者：
Yoshida, T.
中科院分区：
文献类型：
--
作者：
Sawayanagi, M.;Diaz, J. M.;Yoshida, T.
采用介等离子体化学气相沉积（MPCVD）方法在（1102）取向蓝宝石衬底上制备了异质外延硅薄膜。在600 ℃的温度下，以6 nm/s的相对快的沉积速率获得膜，并且在770 ℃的更高温度下沉积速率进一步增加到8.3nm/s。这证明了MPCVD与其他异质外延工艺（例如MBE和热CVD）相比在低温和高速率沉积方面的优势。(C)2006 Elsevier B. V.保留所有权利。
Heteroepitaxial silicon films have been deposited on (1102) oriented sapphire substrates by mesoplasma chemical vapor deposition (MPCVD) at various substrate temperatures. At a temperature of 600 degrees C, the film was obtained at a relatively fast deposition rate of 6 nm/s, and the deposition rate further increased to 8.3 nm/s at higher temperature of 770 degrees C. This is an evidence of the advantage of the MPCVD for low temperature and high rate deposition compared to other heteroepitaxial processes, such as MBE and thermal CVD. (C) 2006 Elsevier B.V. All rights reserved.