A Dual-Antenna, 263-GHz Energy Harvester in CMOS for Ultra-Miniaturized Platforms with 13.6% RF-to-DC Conversion Efficiency at −8 dBm Input Power
A Dual-Antenna, 263-GHz Energy Harvester in CMOS for Ultra-Miniaturized Platforms with 13.6% RF-to-DC Conversion Efficiency at −8 dBm Input Power
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DOI：
10.1109/rfic54546.2022.9863171
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发表时间：
2022-06
期刊：
影响因子：
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通讯作者：
Muhammad Ibrahim Wasiq Khan;Eunseok Lee;Nathan M. Monroe;A. Chandrakasan;R. Han
中科院分区：
文献类型：
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作者：
Muhammad Ibrahim Wasiq Khan;Eunseok Lee;Nathan M. Monroe;A. Chandrakasan;R. Han
本文报告了CMOS Energy Harvester，其运行率是迄今为止报告的频率最高的频率（263 GHz），以实现超微小化平台的无线供电，以最大程度地提高THZ-DC转换效率。收割机不仅利用高速22 nm的FinFET晶体管，而且还可以在特定的情况下实现设备的最佳操作条件它是双重的拓扑，它驱动晶体管漏极和栅极端子，同时且精确地具有最佳的电压相位差和功率比。 1-kΩ负载。
This paper reports a CMOS energy harvester, which operates at so far the highest reported frequency (263 GHz) in order to realize wireless powering of ultra-miniaturized platforms. To maximize the THz-to-DC conversion efficiency, n, at low available radiation power, the harvester not only utilizes a high-speed 22-nm FinFET transistor but also achieves the optimal operating conditions of the device. In specific, the circuit enables self-gate biasing; and through a dual-antenna topology, it drives the transistor drain and gate terminals with both optimal voltage phase difference and power ratio simultaneously and precisely. With a low input power of −8 dBm, the harvester achieves 13.6% measured conversion efficiency and delivers 22 µW to a 1- kΩ load. Without relying on any external component, the harvester chip occupies an area of 0.61 × 0.93 mm 2.