Optical properties of Ga0.8In0.2As/GaAs surface quantum wells.
Optical properties of Ga0.8In0.2As/GaAs surface quantum wells.
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DOI：
10.1103/physrevb.48.14741
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发表时间：
1993-11
期刊：
影响因子：
--
通讯作者：
Dreybrodt;Forchel;Reithmaier
中科院分区：
文献类型：
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作者：
Dreybrodt;Forchel;Reithmaier
我们研究了Ga0.8In0.2As量子威尔斯的光致发光，其中顶部势垒由Ga0.8In0.2As层的表面限定.表面量子威尔斯的光谱进行了比较的GaAs/Ga 0.8 In 0.2 As/GaAs量子威尔斯与不同的GaAs顶部势垒厚度的发射。由于在表面量子威尔斯中限制势的增加，我们观察到与具有厚半导体势垒的量子威尔斯的发射线相比，发射线的显著蓝移（约20 meV
We have investigated the photoluminescence of Ga 0.8 In 0.2 As quantum wells where the top barrier is defined by the surface of Ga 0.8 In 0.2 As layers. The spectra of surface quantum wells are compared to the emission of GaAs/Ga 0.8 In 0.2 As/GaAs quantum wells with varying GaAs top barrier thicknesses. Due to the increase of the confinement potential in the surface quantum wells we observe a significant blue-shift of the emission line (of about 20 meV) compared to the emission line of quantum wells with a thick semiconductor barrier