Realization of atomic layer etching of silicon
Realization of atomic layer etching of silicon
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DOI：
10.1116/1.588651
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发表时间：
1996-11-01
影响因子：
1.4
通讯作者：
Economou, DJ
中科院分区：
文献类型：
--
作者：
Athavale, SD;Economou, DJ
开发了实验系统和方法来实现单层精度的单晶硅干法刻蚀。硅的原子层蚀刻是一个由四个连续步骤组成的循环过程：反应物吸附、过量反应物排出、离子照射和产物排出。如果成功，完成一个循环会导致去除一层单层硅。该过程对于反应物和离子剂量都是自我限制的。离子能量的控制是实现每个周期蚀刻一个单层的最重要因素。 (C) 1996 年美国真空协会。
An experimental system and methodology were developed to realize dry etching of single crystal silicon with monolayer accuracy. Atomic layer etching Of silicon is a cyclic process composed of four consecutive steps: reactant adsorption, excess reactant evacuation, ion irradiation, and product evacuation. When successful, completion of one cycle results in removal of one monolayer of silicon. The process was self-limiting with respect to both reactant and ion dose. Control of the ion energy was the most important factor in realizing etching of one monolayer per cycle. (C) 1996 American Vacuum Society.