Preparation of a titanium thin film using a sputtering deposition process with a powder material target

Preparation of a titanium thin film using a sputtering deposition process with a powder material target
复制标题

DOI:
10.14723/tmrsj.37.147
复制
发表时间:
2012-06
期刊:
Transactions-Materials Research Society of Japan
影响因子:
--
通讯作者:
Hiroharu Kawasaki;T. Ohshima;K. Arafune;Y. Yagyu;Y. Suda
Hiroharu Kawasaki;T. Ohshima;K. Arafune;Y. Yagyu;Y. Suda
中科院分区:
其他
文献类型:
--
作者:
Hiroharu Kawasaki;T. Ohshima;K. Arafune;Y. Yagyu;Y. Suda

文献摘要

被引文献

相似文献

采用高频磁控溅射法和钛粉末材料靶材制备钛(Ti)薄膜,并通过光发射法对处理等离子体进行分析。使用钛粉末靶材制备的薄膜的原子力显微图像显示出与使用钛块体靶材制备的薄膜几乎相同的图像。 XRD和XPS测量表明,可以使用Ti粉末靶材制备二氧化钛薄膜,其性能取决于基底温度以及氩气和氧气的混合气体。通过光学发射光谱法鉴定单原子中性钨原子和离子。
Titanium (Ti) thin films were produced using a high frequency magnetron sputtering method with a Ti powder material target, and the processing plasma was analyzed via an optical emission method. Atomic force microscopic images of the films prepared using Ti powder targets show nearly the same images as the film prepared using Ti bulk target. XRD and XPS measurements suggest that titanium oxide thin films can be prepared using Ti powder targets, and their properties depend on the substrate temperature and the argon and oxygen gas mixture. Mono-atomic neutral tungsten atoms and ions were identified by optical emission spectroscopy.