Initial oxidation of zirconium and Zircaloy-2 with oxygen and water vapor at room temperature
Initial oxidation of zirconium and Zircaloy-2 with oxygen and water vapor at room temperature
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DOI：
10.1016/0022-3115(95)00194-8
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发表时间：
1996-04-01
影响因子：
3.1
通讯作者：
Gruen, DM
中科院分区：
文献类型：
--
作者：
Nishino, Y;Krauss, AR;Gruen, DM
用俄歇电子能谱和X射线光电子能谱研究了锆和锆-2合金在室温下与氧和水蒸气的初始氧化过程。在氧气和水蒸气气氛中，表面上都形成了Zr_2O、ZrO和Zr_2O_3三种低价氧化物，并伴有ZrO_2的氧化物。ZrO 2的形成开始于约0.2-0.4 L（1 L = 10（-6）Torr s）的氧气暴露。锆与氧的氧化速率略大于锆-2合金。在低压水蒸气暴露（< 10 L）的情况下，锆上的低氧化物的量大于锆-2上的低氧化物的量，因为H2O分子的解离在前者上更容易进行。ZrO 2在1.0L水蒸气中开始形成，并且其在水蒸气气氛中的形成速率远小于在氧气中的形成速率。对于暴露于30 L氧气的表面，获得ZrO 1.50 -1.53的平均组成和2.3 nm的膜厚度，并且对于30 L水蒸气暴露，获得具有组成2 rO（1.06）的1.3 nm厚的膜。
The initial oxidation of zirconium and Zircaloy-2 with oxygen and water vapor has been investigated at room temperature with Auger electron and X-ray photoelectron spectroscopies. Three suboxides of Zr2O, ZrO and Zr2O3 accompanied by the oxidde of ZrO2 are formed on surfaces in both oxygen and water vapor atmospheres. Formation of ZrO2 starts at about 0.2-0.4 L (1 L = 10(-6) Torr s) oxygen exposure. The oxidation rate of zirconium with oxygen is slightly larger than that of Zircaloy-2. In the case of low pressure water vapor exposure (< 10 L), the amounts of suboxides on the zirconium are larger than on the Zircaloy-2, since dissociation of H2O molecules proceeds more easily on the former. The ZrO2 starts to form after a 1.0 L water vapor exposure, and its formation rate in water vapor ambience is much smaller than that in oxygen. An average composition of ZrO1.50-1.53 and film thickness of 2.3 nm are obtained for surfaces exposed to 30 L oxygen, and a 1.3 nm thick film with composition 2rO(1.06) is obtained for 30 L of water vapor exposure.