Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach
Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach
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Gd 掺杂对采用注入方法的 HfO2 基阻变存储器件性能的影响
DOI：
10.1063/1.3543837
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发表时间：
2011-01-24
影响因子：
4
通讯作者：
Yu, Bin
中科院分区：
文献类型：
--
作者：
Zhang, Haowei;Liu, Lifeng;Yu, Bin
采用注入掺杂的方法制备了掺Gd的HfO2阻变存储器（RRAM）器件。Gd掺杂的HfO2 RRAM器件的性能得到了显著的提高，包括改善了开关参数的均匀性，增大了开关比，提高了开关速度，而没有明显的可靠性下降。Gd掺杂HfO2 RRAM器件的性能改善是由于三价Gd掺杂效应抑制了氧空位细丝形成的随机性和降低了氧离子迁移势垒。实验结果也证明了注入掺杂方法在制备RRAM器件中的有效性。
An implantation doping approach is implemented to fabricate Gd-doped HfO2 resistive random access memory (RRAM) devices. The significantly enhanced performances are achieved in the Gd-doped HfO2 RRAM devices including improved uniformity of switching parameters, enlarged ON/OFF ratio, and increased switching speed without obvious reliability degradation. This performance improvement in the Gd-doped HfO2 RRAM devices is clarified to the suppressed randomicity of oxygen vacancy filaments’ formation and the reduced oxygen ion migration barrier induced by trivalent Gd-doping effect. The achieved results also demonstrate the validity of implantation doping approach for the fabrication of RRAM devices.