Xenon excimer emission from pulsed microhollow cathode discharges
Xenon excimer emission from pulsed microhollow cathode discharges
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脉冲微空心阴极放电的氙准分子发射
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
K. Schoenbach
中科院分区：
文献类型：
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作者：
M. Moselhy;W. Shi;R. Stark;K. Schoenbach
通过对直流微空心阴极放电产生的氙微等离子体施加持续时间为 20 ns 的电脉冲，我们能够将氙准分子发射比直流放电准分子发射增加一个数量级以上。对于超过 500 V 的脉冲电压，发现 172 nm 处的光功率随电压呈指数增加。获得的最大值为 2.75 W 的真空紫外光功率，该功率是在 400 Torr 氙气中的单个微空心阴极放电中施加 750 V 脉冲进行放电时发出的。最高辐射发射率为15.2 W/cm2。研究发现，准分子发射效率随着脉冲电压高于 500 V 而线性增加，在 750 V 时达到 20%。
By applying electrical pulses of 20 ns duration to xenon microplasmas, generated by direct current microhollow cathode discharges, we were able to increase the xenon excimer emission by more than an order of magnitude over direct current discharge excimer emission. For pulsed voltages in excess of 500 V, the optical power at 172 nm was found to increase exponentially with voltage. Largest values obtained were 2.75 W of vacuum-ultraviolet optical power emitted from a single microhollow cathode discharge in 400 Torr xenon with a 750 V pulse applied to a discharge. Highest radiative emittance was 15.2 W/cm2. The efficiency for excimer emission was found to increase linearly with pulsed voltages above 500 V reaching values of 20% at 750 V.