High-Q AlN ladder-structure photonic crystal nanocavity fabricated by layer transfer
High-Q AlN ladder-structure photonic crystal nanocavity fabricated by layer transfer
复制标题
层转移制备高Q AlN梯形结构光子晶体纳米腔
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
Y. Arakawa
中科院分区：
文献类型：
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作者：
S. Sergent;M. Arita;S. Kako;K. Tanabe;S. Iwamoto;Y. Arakawa
在这份报告中，我们展示了如何一维梯形结构的光子晶体腔设计可以用来减少AlN光子晶体纳米腔的非本征损耗。通过层转移法在含有GaN量子点的AlN外延层中实现了该设计。纳米腔的显微光致发光特性揭示了分辨率限制的品质因数高达6900，是迄今为止在III族氮化物光子晶体纳米腔中报道的最高品质因数。（© 2013 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
In this report, we show how one-dimensional ladder-structure photonic crystal cavity design can be used to reduce extrinsic losses in AlN photonic crystal nanocavities. The design is implemented in an AlN epilayer containing GaN QDs by a layer transfer method. Microphotoluminescence characterization of nanocavities reveals resolution-limited quality factors as high 6900, the highest reported to date in group-III nitride photonic crystal nanocavities. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)