Enhanced Stability of Black Phosphorus Field-Effect Transistors via Hydrogen Treatment
Enhanced Stability of Black Phosphorus Field-Effect Transistors via Hydrogen Treatment
复制标题
通过氢处理增强黑磷场效应晶体管的稳定性
DOI：
10.1002/aelm.201700455
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发表时间：
2018
影响因子：
6.2
通讯作者：
Liu Zhongyuan
中科院分区：
文献类型：
--
作者：
Wan Bensong;Zhou Qionghua;Zhang Junying;Wang Yue;Yang Bingchao;Lv Weiming;Zhang Baoshun;Zeng Zhongming;Chen Qian;Wang Jinlan;Wang Wenhong;Wen Fusheng;Xiang Jianyong;Xu Bo;Zhao Zhisheng;Tian Yongjun;Liu Zhongyuan
原子级薄的黑磷（BP）在未来的电子和光电子器件中具有广泛的应用前景。然而，BP表现出快速的环境降解，因此在实际应用中受到严重限制。在这里，一个简单的策略，使用氢处理，以提高BP薄片的环境稳定性的报告。由于氢处理大大抑制了环境降解，即使在空气中长达4周后，原子BP薄片的表面也只有轻微腐蚀，更令人印象深刻的是，BP场效应晶体管仍然保持其初始迁移率和ION/IOFF比的85%以上。第一性原理计算表明，氢分子可能嵌入BP层之间，并向下移动导带最小值，这强烈地防止了表面上超氧化物的形成，从而抑制了BP的环境降解。本研究提供了一种简单且非破坏性的方法来实现空气稳定的BP设备。
Atomically thin black phosphorus (BP) exhibits great potential for wide applications in future electronic and optoelectronic devices. However, BP exhibits fast ambient degradation and is thus severely limited in practical applications. Here, a simple strategy using hydrogen treatment to enhance the environmental stability of BP flakes is reported. Owing to the drastically suppressed ambient degradation by hydrogen treatment, atomic BP flakes are just slightly corroded on the surface even after up to 4 weeks in air, and more impressively, the BP field‐effect transistors still maintain over 85% of their initial mobility andION/IOFFratio. First‐principle calculations indicate that the hydrogen molecules are probably embedded between BP layers, and shift down the conduction band minimum, which strongly protects against the formation of superoxide on the surface and thus suppresses the ambient degradation of BP. This study provides a simple and nondestructive route to achieve air‐stable BP devices.