Growth of Cubic G A N on (001) G A AS
Growth of Cubic G A N on (001) G A AS
复制标题
立方 G A N 在 (001) G A AS 上的生长
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
K. Ploog
中科院分区：
文献类型：
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作者：
O. Brandt;Hui Yang;A. Trampert;K. Ploog
作者提出了通过分子束外延在 (001) GaAs 上生长立方 GaN 薄膜的研究。研究重点是 GaN 的成核阶段以及随后的生长。这种极端失配（20%）的外延生长现象被证明是由 GaAs 和 GaN 之间的重合晶格引起的。在这种理解中，GaN 层中存在高密度堆垛层错被解释为完全松弛核聚结的自然结果。作者还通过在撞击 Ga 通量时观察到的表面重构跃迁分析了 GaN 的生长动力学，从中获得了 Ga 的解吸速率以及 Ga 稳定的 GaN 表面上 Ga 吸附原子的扩散系数。人们发现，在分子束外延过程中常用的生长温度下，Ga 的扩散率非常低，这为在样品上观察到的微观表面粗糙度提供了解释。
The authors present a study of the growth of cubic GaN films on (001) GaAs by molecular beam epitaxy. The investigations focus on the nucleation stage as well as on the subsequent growth of GaN. The phenomenon of epitaxial growth at this extreme mismatch (20%) is demonstrated to arise from a coincidence lattice between GaAs and GaN. The presence of a high-density of stacking faults in the GaN layer is explained within this understanding as being a natural consequence of the coalescence of perfectly relaxed nuclei. The authors furthermore analyze the growth kinetics of GaN via the surface reconstruction transitions observed upon an impinging Ga flux, from which they obtain both the desorption rate of Ga as well as the diffusion coefficient of Ga adatoms on the Ga-stabilized GaN surface. The diffusivity of Ga is found to be very low at the growth temperatures commonly used during molecular beam epitaxy, which provides an explanation for the microscopic surface roughness observed on the samples.