Residual native shallow donor in ZnO
Residual native shallow donor in ZnO
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DOI：
10.1103/physrevlett.82.2552
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发表时间：
1999-03-22
影响因子：
8.6
通讯作者：
Sizelove, JR
中科院分区：
文献类型：
--
作者：
Look, DC;Hemsky, JW;Sizelove, JR
高能电子辐照在ZnO中产生约E-C - 30 meV的浅施主。因为Zn面（0001）的产生速率比O面（000（1）在棒上）辐照的产生速率高得多，所以供体被鉴定为Zn亚晶格缺陷，最可能是间隙Zn-I或Zn-I相关络合物。施主能量与未辐照样品和文献中讨论的其他样品的施主能量非常接近，这强烈表明Zn-I（而不是V-O）是ZnO中占主导地位的原生浅施主。一个非常高的位移阈值能量（类似于1.6兆电子伏）定量解释的多位移模型。[S0031-9007（99）08717-7]。
High-energy electron irradiation in ZnO produces shallow donors at about E-C - 30 meV. Because the production rate is much higher for Zn-face (0001) than O-face (000 (1) over bar) irradiation, the donor is identified as a Zn-sublattice defect, most likely the interstitial Zn-I or a Zn-I-related complex. The donor energy is quite close to that of the unirradiated sample, and of other samples discussed in the literature, strongly suggesting that Zn-I (and not V-o) is the dominant native shallow donor in ZnO. An exceptionally high displacement threshold energy (similar to 1.6 MeV) is quantitatively explained in terms of a multiple-displacement model. [S0031-9007(99)08717-7].