CMOS Photodetectors Integrated With Plasmonic Color Filters
CMOS Photodetectors Integrated With Plasmonic Color Filters
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DOI：
10.1109/lpt.2011.2176333
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发表时间：
2012-02-01
影响因子：
2.6
通讯作者：
Cumming, David R. S.
中科院分区：
文献类型：
--
作者：
Chen, Qin;Chitnis, Danial;Cumming, David R. S.
采用电子束光刻和干法刻蚀技术，在CMOS光电二极管上集成等离子体滤色器，制作了单像素等离子体互补金属氧化物半导体（CMOS）光电传感器。光电流测量结果证实了在单层纳米结构铝膜中可以实现的三原色滤波响应。时域差分模拟结果与实测结果吻合较好。该研究将有助于开发低成本、低串扰的先进CMOS图像传感器。
A single-pixel plasmonic complementary metal oxide semiconductor (CMOS) photo sensor consisting of a plasmonic color filter integrated on a CMOS photodiode was fabricated using electron beam lithography and dry etch. The photocurrent measurement results confirmed the three primary color filtering responses that could be achieved in a single layer of nanostructured aluminium film. Finite-difference time-domain simulation demonstrated a good agreement of the reflection spectra with the measured result. This research can lead to the development of advanced CMOS image sensors with low cost and low crosstalk.