Degradation and annealing studies on gamma rays irradiated COTS PPD CISs at different dose rates
Degradation and annealing studies on gamma rays irradiated COTS PPD CISs at different dose rates
复制标题
不同剂量率伽马射线辐照 COTS PPD CIS 的降解和退火研究
DOI：
10.1016/j.nima.2016.03.006
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发表时间：
2016-06-01
影响因子：
1.4
通讯作者：
Sheng, Jiangkun
中科院分区：
文献类型：
--
作者：
Wang, Zujun;Ma, Yingwu;Sheng, Jiangkun
本文研究了不同剂量率的COTS（Commercial-Off-The-Shelf）钉扎光电二极管（PPD）CMOS图像传感器（CIS）在Colbalt-60 γ射线辐照下的退化和退火特性。在0.3，3.0和30.0rad（Si）/s的辐照条件下，对COTS PPD CIS进行了辐照实验。COTS PPD CIS采用标准0.18 μ m CMOS工艺制造，采用四晶体管像素PPD架构.测试CIS的行为显示出显着的降解后照射和剂量率不同。研究了在不同剂量率下的暗电流、暗信号不均匀性（DSNU）、随机噪声、饱和输出、信噪比（SNR）和动态范围（DR）与总电离剂量（TID）的关系。在3.0 rad（Si）/s下，暗电流、DSNU和随机噪声的增加趋势以及饱和输出、SNR和DR的下降趋势远大于0.3和30.0 rad（Si）/s下的趋势。分析了不同剂量率下TID辐照的损伤机理。退火试验在辐照后的无偏条件下在室温下进行。(C)© 2016 Elsevier B. V.版权所有。
The degradation and annealing studies on Colbalt-60 gamma-rays irradiated commercial-off-the-shelf (COTS) pinned photodiode (PPD) CMOS image sensors (CISs) at the various dose rates are presented. The irradiation experiments of COTS PPD CISs are carried out at 0.3, 3.0 and 30.0 rad(Si)/s. The COTS PPD CISs are manufactured using a standard 0.18-mu m CMOS technology with four -transistor pixel PPD architecture. The behavior of the tested CISs shows a remarkable degradation after irradiation and differs in the dose rates. The dark current, dark signal non -uniformity (DSNU), random noise, saturation output, signal to noise ratio (SNR), and dynamic range (DR) versus the total ionizing dose (TID) at the various dose rates are investigated. The tendency of dark current, DSNU, and random noise increase and saturation output, SNR, and DR to decrease at 3.0 rad(Si)/s are far greater than those at 0.3 and 30.0 rad (Si)/s. The damage mechanisms caused by TID irradiation at the various dose rates are also analyzed. The annealing tests are carried out at room temperature with unbiased conditions after irradiation. (C) 2016 Elsevier B.V. All rights reserved.