Nonequilibrium electronic transport in a one-dimensional Mott insulator
Nonequilibrium electronic transport in a one-dimensional Mott insulator
复制标题
一维莫特绝缘体中的非平衡电子输运
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
E. Dagotto
中科院分区：
文献类型：
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作者：
F. Heidrich;I. González;K. Al;A. Feiguin;M. Rozenberg;E. Dagotto
我们计算了一个一维的相互作用链在半填充，耦合到非相互作用的铅的非平衡电子输运性质。相互作用的链最初处于莫特绝缘体状态，通过在引线之间施加强偏置电压而使其脱离平衡。对于偏置电压高于一定的阈值，我们观察到的莫特绝缘体状态的击穿和建立一个稳态的电子电流通过系统。基于广泛的时间依赖性密度矩阵重整化群模拟，我们表明，这种稳态电流总是具有相同的功能依赖于电压，独立的微观细节的模型，我们与阈值的值的Lieb-Wu间隙。我们帧我们的结果在朗道-齐纳介电击穿图片。最后，我们还讨论了电流的实时演化，并通过计算二重占据率、自旋结构因子和纠缠熵来表征Mott绝缘体击穿产生的载流态。
We calculate the nonequilibrium electronic transport properties of a one-dimensional interacting chain at half filling, coupled to noninteracting leads. The interacting chain is initially in a Mott insulator state that is driven out of equilibrium by applying a strong bias voltage between the leads. For bias voltages above a certain threshold we observe the breakdown of the Mott insulator state and the establishment of a steady-state electronic current through the system. Based on extensive time-dependent density-matrix renormalization-group simulations, we show that this steady-state current always has the same functional dependence on voltage, independent of the microscopic details of the model and we relate the value of the threshold to the Lieb-Wu gap. We frame our results in terms of the Landau-Zener dielectric breakdown picture. Finally, we also discuss the real-time evolution of the current, and characterize the current-carrying state resulting from the breakdown of the Mott insulator by computing the double occupancy, the spin structure factor, and the entanglement entropy.