Far-infrared emission from two-dimensional electron and hole gases in GaAs/(AlGa)As heterojunctions
Far-infrared emission from two-dimensional electron and hole gases in GaAs/(AlGa)As heterojunctions
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GaAs/(AlGa)As 异质结中二维电子和空穴气体的远红外发射
DOI：
10.1088/0268-1242/9/5s/117
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发表时间：
1994
影响因子：
1.9
通讯作者：
M. Henini
中科院分区：
文献类型：
--
作者：
N. N. Zinov'ev;A. Akimov;L. Challis;A. Jezierski;M. Henini
研究了GaAs/(AlGa)As异质结构中二维电子气体和空穴气体（2DEGs和2DHGs）的远红外发射（FIR）随源漏电流和磁场的变化规律。在2DEG上的结果表明，FIR的比例来自2DEG的大部分，而不是来自接触附近的对角线对角，在那里发生了大量的耗散，随着电流和磁场的变化而变化。结果表明，在相同的源漏电流下，pdhg的载流子温度比2℃的载流子温度低得多。
An investigation has been made of the far-infrared emission (FIR) from two-dimensional electron and hole gases (2DEGs and 2DHGs) in GaAs/(AlGa)As heterostructures as a function of source-drain current and magnetic field. The results on 2DEGs indicate that the proportion of FIR coming from the bulk of the 2DEG, rather than from the diagonally opposite corners near the contacts where a significant amount of the dissipation takes place, varies with both current and magnetic field. The results on PDHGs suggest that the carrier temperatures are very much lower than those in 2DEGs for the same source-drain current.