Crack-free GaN/Si(1 1 1) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition
Crack-free GaN/Si(1 1 1) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition
复制标题
DOI：
10.1016/j.jcrysgro.2005.02.070
复制
发表时间：
2005-06
影响因子：
1.8
通讯作者：
Jiejun Wu;Xiuxun Han;J. Li;Dabing Li;Yuan Lu;Hongyuan Wei;G. Cong;X. Liu;Qinsheng Zhu;Zhan-guo Wang
中科院分区：
文献类型：
--
作者：
Jiejun Wu;Xiuxun Han;J. Li;Dabing Li;Yuan Lu;Hongyuan Wei;G. Cong;X. Liu;Qinsheng Zhu;Zhan-guo Wang
