Role of integrated lateral stress in surface deformation of He‐implanted surfaces
Role of integrated lateral stress in surface deformation of He‐implanted surfaces
复制标题
DOI：
10.1063/1.323332
复制
发表时间：
1977
影响因子：
3.2
通讯作者：
E. P. Eernisse;S. T. Picraux
中科院分区：
文献类型：
--
作者：
E. P. Eernisse;S. T. Picraux
首次获得了在发生地表变形的能量密度下的综合侧向应力S的测量值。在室温下进行到Mo、Nb和Al中的植入。低通量结果提供了每个注入He原子的诱导体积膨胀值。高通量结果表明，在Mo和Nb中观察到的起泡与S的释放直接相关。然而，在Al中观察到的剥落不会导致S的明显减轻。综合侧向应力的饱和值Smax与三种材料的屈服应力成正比，与He投影范围无关。基于承受面内力的板的标准弹性稳定性方程，建立了描述起泡现象的模型。该弹性不稳定模型仅使用可测量的材料参数，并且不明确依赖于材料中He的行为。该模型解释了观察到的泡罩直径d的τ d2/3关系。
The first measurements of integrated lateral stress S have been obtained for He implantations to fluences where surface deformation occurs. Implants into Mo, Nb, and Al were carried out at room temperature. The low‐fluence results provide values for the induced volume expansion per implanted He atom. The high‐fluence results demonstrate that blistering, as observed in Mo and Nb, is directly related to relief of S. However, flaking, as observed in Al, does not result in appreciable relief of S. The saturation value of integrated lateral stress, Smax, is proportional to yield stress for the three materials and is independent of the He projected range. A model to describe the blistering phenomenon is developed based on the standard elastic stability equation for a plate subjected to in‐plane forces. This elastic instability model uses only measurable material parameters and does not depend explicitly on the behavior of He in the material. The model explains the τ∝d2/3 relation observed for blister diameter d...