ELECTRONIC-STRUCTURE OF THE SEMIMETALS BI AND SB
ELECTRONIC-STRUCTURE OF THE SEMIMETALS BI AND SB
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DOI：
10.1103/physrevb.52.1566
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发表时间：
1995-07-15
影响因子：
3.7
通讯作者：
ALLEN, RE
中科院分区：
文献类型：
--
作者：
LIU, Y;ALLEN, RE
我们发展了一个包含自旋轨道耦合的第三近邻紧束缚模型来处理Bi和Sb的电子性质。这个模型成功地再现了费米表面附近的特征，这些特征在半金属半导体器件结构中将是最重要的，包括（a）价带和导带的小重叠，（B）电子和hob有效质量，以及（c）电子的形状和：空穴费米面本紧束缚模型处理这些半金属性质定量，因此，它应该是有用的计算拟议的半金属半导体系统，包括超晶格和共振隧穿器件的电子性质。
We have developed a third-neighbor tight-binding model, with spin-orbit coupling included, to treat the electronic properties of Bi and Sb. This model successfully reproduces the features near the Fermi surface that will be most important in semimetal-semiconductor device structures, including (a) the small overlap of valence and conduction bands, (b) the electron and hob effective masses, and (c) the shapes of the electron and:hole Fermi surfaces. The present tight-binding model treats these semimetallic properties quantitatively, and it should, therefore, be useful for calculations of the electronic properties of proposed semimetal-semiconductor systems, including superlattices and resonant-tunneling devices.