Substrate Bias Enhanced Trap Effects on Time-Dependent Dielectric Breakdown of GaN MIS-HEMTs
Substrate Bias Enhanced Trap Effects on Time-Dependent Dielectric Breakdown of GaN MIS-HEMTs
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DOI：
10.1109/ted.2021.3067615
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发表时间：
2021-05
影响因子：
3.1
通讯作者：
Wen Yang;Jiann-Shiun Yuan
中科院分区：
文献类型：
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作者：
Wen Yang;Jiann-Shiun Yuan
本文通过实验研究了衬底偏压增强陷阱对GaN金属-绝缘体-半导体高电子迁移率晶体管中含时介质击穿(TDDB)的影响。在不同衬底偏置下，从实验数据中提取了威布尔分布的形状参数β和标度因子β。与负衬底偏压增加的受主类缓冲陷阱的空穴发射有关，观察到从本征击穿到非本征击穿的单调下降，而在较大的正衬底偏压下增加。这一意外增加的$\eta$表明，类似于施主的缓冲陷阱发挥了重要作用，寿命更长。基于逐步击穿(PBD)分析了与渗流路径建立相关的陷阱机制。在每个应力循环中测量了电容-电压特性，确定了在不同衬底偏压下具有不同陷阱分布的栅堆栈层中的空穴注量和电子注入。最后，对TDDB的失效机理进行了2-D器件模拟，以期从物理上深入了解TDDB的失效机理。
In this work, we present the substrate bias enhanced trap effects on time-dependent dielectric breakdown (TDDB) in GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) by experiment. Under different substrate biases, the shape parameter $\beta $ and scale factor $\eta $ of the Weibull distribution are extracted from the experimental data. A monotonical decrease in $\beta $ from intrinsic breakdown to extrinsic breakdown relating to the hole-emission from the acceptor-like buffer traps with increased negative substrate biases has been observed, while $\eta $ is increased at large positive substrate biases. This unexpected increase in $\eta $ suggests that the donor-like buffer traps play an important role with a longer lifetime. The trap mechanisms, relating to percolation path establishment, are analyzed based on progressive breakdown (PBD). The capacitance–voltage characteristics are measured during each stress cycle confirming the hole fluence and electron injection in the gate-stack layer with different trap distributions under various substrate biases. Finally, 2-D device simulations are carried out to probe for physical insight into the traps on TDDB failure mechanisms.