Effects of 3He impurities on the mass decoupling of 4He films
Effects of 3He impurities on the mass decoupling of 4He films
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3He杂质对4He薄膜质量退耦的影响
DOI：
10.1103/physrevb.102.104104
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发表时间：
2020
影响因子：
3.7
通讯作者：
M. Suzuki
中科院分区：
文献类型：
--
作者：
K. Ishibashi;J. Hiraide;J. Taniguchi;T. Minoguchi;M. Suzuki
我们进行了石英晶体微天平实验，使用5 MHz AT切割晶体的超流膜剥离石墨（Grafoil）含有高达0.40原子/。我们发现，从振荡基板的固体层的质量去耦是相当敏感的，即使有少量的。对于29.3atoms/的薄膜，我们观察到在低振幅下，在aofK处的共振频率有一个小的下降，这归因于原子在固体层的粘附。对于更高的振幅，固体层在接近处显示出重入质量解耦。这种退耦现象可以用原子吸附在刃位错上抑制超流逆流来解释。随着面密度的增加，在39.0 atoms/cm ~ 2的薄膜附近，温度向低温方向移动并消失。
We performed quartz crystal microbalance experiments using a 5-MHz AT-cut crystal for superfluidfilms on exfoliated graphite (Grafoil) containing up to 0.40 atom/. We found that the mass decoupling ofsolid layers from the oscillating substrate is considerably sensitive, even with small amounts of. For afilm of 29.3 atoms/, we observed a small drop in resonant frequency at aofK for a low oscillation amplitude, which is attributed to the sticking ofatoms at thesolid layer. For higher amplitudes, thesolid layer shows a reentrant mass decoupling atclose to. This decoupling can be explained by the suppression of the superfluid counterflow owing to the adsorption of theatoms on edge dislocations. As theareal density increases,shifts to a lower temperature and disappears around thefilm of 39.0 atoms/.