Improved Stability of High-Performance ZnO/ZnMgO Hetero-MISFETs
Improved Stability of High-Performance ZnO/ZnMgO Hetero-MISFETs
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DOI：
10.1109/led.2007.899448
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发表时间：
2007-06
影响因子：
4.9
通讯作者：
S. Sasa;T. Hayafuji;M. Kawasaki;K. Koike;M. Yano;M. Inoue
中科院分区：
文献类型：
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作者：
S. Sasa;T. Hayafuji;M. Kawasaki;K. Koike;M. Yano;M. Inoue
ZnO/ZnMgO异质MISFET的性能和稳定性得到了改善。通过观察传输特性滞后来检查使用50 nm厚的Al 2 O3或HfO 2栅极电介质层形成的MIS栅极结构。一个显着降低的滞后小于0.1 V，获得HfO 2相比，为Al 2 O3栅极电介质。通过降低接入电阻，1 μ m的栅极器件显示出改善的介电常数值，高达54 mS/mm的Al 2 O3和71 mS/mm的HfO 2，这是有史以来报道的ZnO基FET的最高值。
Improved performance and stability was demonstrated for ZnO/ZnMgO hetero-MISFETs. The MIS gate structures that were formed using either a 50-nm-thick Al2O3 or HfO2 gate dielectric layer were examined by observation of the transfer characteristic hysteresis. A significantly reduced hysteresis of less than 0.1 V was obtained for HfO2 as compared to that for the Al2O3 gate dielectric. By reducing the access resistance, the 1-mum gate devices showed improved transconductance values, as high as 54 mS/mm for Al2O3 and 71 mS/mm for HfO2, which are the highest values ever reported for ZnO-based FETs.