N- and p-type carrier injections into WSe2 with van der Waals contacts of two-dimensional materials
N- and p-type carrier injections into WSe2 with van der Waals contacts of two-dimensional materials
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DOI：
10.7567/jjap.56.04ck09
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发表时间：
2017-02
影响因子：
1.5
通讯作者：
Y. Sata;R. Moriya;S. Masubuchi;Kenji Watanabe;T. Taniguchi;T. Machida
中科院分区：
文献类型：
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作者：
Y. Sata;R. Moriya;S. Masubuchi;Kenji Watanabe;T. Taniguchi;T. Machida
我们使用二维(2D)材料的van der Waals(VDW)接触演示了n型和p型载流子注入到过渡金属二卤化物(TMD)WSe2中：石墨用于n型接触，NbSe2用于p型接触。代替传统的方法，如在TMD上蒸发金属，将2D金属转移到WSe 2上以形成van der Waals接触。通过这些接触，我们展示了两个载流子极性的小肖特基势垒高度。我们的发现揭示了高性能VDW金属/半导体触点在电子应用中的潜力。
We demonstrated n- and p-type carrier injections into a transition metal dichalcogenide (TMD) WSe2 using van der Waals (vdW) contacts of two-dimensional (2D) materials: graphite for an n-type contact and NbSe2 for a p-type contact. Instead of conventional methods such as the evaporation of metals on TMD, 2D metals were transferred onto WSe2 in order to form van der Waals contacts. With these contacts, we demonstrated a small Schottky barrier height for both carrier polarities. Our finding reveals the potential of a high-performance vdW metal/semiconductor contact for use in electronics applications.