Current induced perpendicular-magnetic-anisotropy racetrack memory with magnetic field assistance
Current induced perpendicular-magnetic-anisotropy racetrack memory with magnetic field assistance
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DOI：
10.1063/1.4863081
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发表时间：
2014-01
影响因子：
4
通讯作者：
Youguang Zhang;Weisheng Zhao;Jacques-Olivier Klein;C. Chappert;D. Ravelosona
中科院分区：
文献类型：
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作者：
Youguang Zhang;Weisheng Zhao;Jacques-Olivier Klein;C. Chappert;D. Ravelosona
高电流密度是移动磁性纳米线中畴壁（DW）所必需的，这限制了跑道存储器（RM）用于低功率和高密度目的。在本文中，我们提出了一种具有全局磁场辅助的双磁各向异性（PMA）Co/Ni RM，它降低了DW运动的电流密度。通过使用PMA RM和40 nm设计套件的紧凑模型，我们进行混合模拟，以验证该结构的功能，并分析其密度潜力。随机DW运动行为已被考虑和统计蒙特-卡罗模拟进行评估其可靠性性能。
High current density is indispensable to shift domain walls (DWs) in magnetic nanowires, which limits the using of racetrack memory (RM) for low power and high density purposes. In this paper, we present perpendicular-magnetic-anisotropy (PMA) Co/Ni RM with global magnetic field assistance, which lowers the current density for DW motion. By using a compact model of PMA RM and 40 nm design kit, we perform mixed simulation to validate the functionality of this structure and analyze its density potential. Stochastic DW motion behavior has been taken into account and statistical Monte-Carlo simulations are carried out to evaluate its reliability performance.