Second-harmonic generation at angular incidence in a negative-positive index photonic band-gap structure.
Second-harmonic generation at angular incidence in a negative-positive index photonic band-gap structure.
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DOI：
10.1103/physreve.74.026608
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发表时间：
2006-08
期刊：
影响因子：
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通讯作者：
G. D’Aguanno;N. Mattiucci;M. Scalora;M. Bloemer
中科院分区：
文献类型：
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作者：
G. D’Aguanno;N. Mattiucci;M. Scalora;M. Bloemer
在负折射率材料的折射率近似为零的光谱区域，在斜入射时，由负折射率材料和正折射率材料交替层组成的有限结构的线性透射表明形成了一种具有极窄带边共振的新型带隙。特别地，对于TM偏振（横向磁）入射波，在带边缘处可实现的场值可能比在标准光子带隙结构中可实现的场值高得多。我们利用这些带边谐振的独特性质来应用于非线性频率转换，特别是二次谐波生成。可以利用高场局域化和相位匹配条件的同时可用性来实现远优于传统光子带隙结构中可实现的二次谐波转换效率。此外，我们研究了负折射率材料内吸收所起的作用，发现即使对于相对较高的吸收系数值，该过程仍然有效。
In the spectral region where the refractive index of the negative index material is approximately zero, at oblique incidence, the linear transmission of a finite structure composed of alternating layers of negative and positive index materials manifests the formation of a new type of band gap with exceptionally narrow band-edge resonances. In particular, for TM-polarized (transverse magnetic) incident waves, field values that can be achieved at the band edge may be much higher compared to field values achievable in standard photonic band-gap structures. We exploit the unique properties of these band-edge resonances for applications to nonlinear frequency conversion, second-harmonic generation, in particular. The simultaneous availability of high field localization and phase matching conditions may be exploited to achieve second-harmonic conversion efficiencies far better than those achievable in conventional photonic band-gap structures. Moreover, we study the role played by absorption within the negative index material, and find that the process remains efficient even for relatively high values of the absorption coefficient.