Comparison of Random Dopant and Gate-Metal Workfunction Variability Between Junctionless and Conventional FinFETs
Comparison of Random Dopant and Gate-Metal Workfunction Variability Between Junctionless and Conventional FinFETs
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DOI：
10.1109/led.2014.2313916
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发表时间：
2014-04
影响因子：
4.9
通讯作者：
S. Nawaz;S. Dutta;A. Chattopadhyay;A. Mallik
中科院分区：
文献类型：
--
作者：
S. Nawaz;S. Dutta;A. Chattopadhyay;A. Mallik
本文首次报道了在随机晶粒取向诱导的金属功函数变异性（WFV）存在下，与类似尺寸的传统FinFET相比，无结（JL） FinFET的性能。通过使用三维数值器件模拟器，比较了随机离散掺杂（RDD）引起的变异性和WFV的相对影响。不同器件参数的标准差数值表明，WFV对JL FinFET的性能参数有显著影响。此外，与WFV相比，RDD的影响在JL设备中更大，正如预期的那样。
This letter reports, for the first time, the performance of a junctionless (JL) FinFET in the presence of random grain orientation-induced metal workfunction variability (WFV), as compared with a similarly sized conventional FinFET. Relative impact of random discrete dopant (RDD)-induced variability and WFV are also compared between such devices by the use of a 3-D numerical device simulator. Numerical values of standard deviation of different device parameters reveal that the performance parameters of a JL FinFET are significantly affected by WFV. In addition, the impact of the RDD, as compared with WFV, is larger in JL devices, as expected.