Atomic layer deposition of sodium fluoride thin films
Atomic layer deposition of sodium fluoride thin films
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DOI：
10.1116/6.0000847
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发表时间：
2021-05-01
影响因子：
2.9
通讯作者：
Graugnard, Elton
中科院分区：
文献类型：
--
作者：
Kuraitis, Sara;Kang, Donghyeon;Graugnard, Elton
在全球对可再生能源的需求不断增长的情况下，对先进的能源转换和存储设备的需求仍然是一个严峻的挑战。金属氟化物薄膜在锂离子电池和新兴的可充电电池技术中的应用，特别是在提高电极-电解液界面的稳定性，从而延长电池的可循环性和寿命方面，具有重要的意义。文献报道，采用原子层沉积法制备了氟化钠薄膜。NaF生长实验是在175-250℃的反应器温度下，使用叔丁醇钠和HF-吡啶溶液进行的。最佳沉积温度范围为175-200℃，所得NaF薄膜具有较低的粗糙度(对于类似于8.5 nm的薄膜，R-Q接近1.6 nm)，接近化学计量比(Na：F=1：1.05)，在SiO_2衬底上的每周生长量为0.85埃/周。这些结果对于NaF薄膜在开发改进的能量捕获和存储技术方面的未来应用是令人鼓舞的。
The need for advanced energy conversion and storage devices remains a critical challenge amid the growing worldwide demand for renewable energy. Metal fluoride thin films are of great interest for applications in lithium-ion and emerging rechargeable battery technologies, particularly for enhancing the stability of the electrode-electrolyte interface and thereby extending battery cyclability and lifetime. Reported within, sodium fluoride (NaF) thin films were synthesized via atomic layer deposition. NaF growth experiments were carried out at reactor temperatures between 175 and 250 degrees C using sodium tert-butoxide and HF-pyridine solution. The optimal deposition temperature range was 175-200 degrees C, and the resulting NaF films exhibited low roughness (R-q approximate to 1.6nm for films of similar to 8.5nm), nearly stoichiometric composition (Na:F=1:1.05) and a growth per cycle value of 0.85 angstrom /cycle on SiO2 substrates. These results are encouraging for future applications of NaF thin films in the development of improved energy capture and storage technologies.