Modular scalable medium-voltage impedance measurement unit using 10 kV SiC MOSFET PEBBs

Modular scalable medium-voltage impedance measurement unit using 10 kV SiC MOSFET PEBBs
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使用 10 kV SiC MOSFET PEBB 的模块化可扩展中压阻抗测量单元

DOI:
10.1109/ests.2015.7157913
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发表时间:
2015
期刊:
2015 IEEE Electric Ship Technologies Symposium (ESTS)
影响因子:
--
通讯作者:
R. Burgos
R. Burgos
中科院分区:
--
文献类型:
--
作者:
I. Cvetkovic;Zhiyu Shen;M. Jakšić;C. Dimarino;Fang Chen;D. Boroyevich;R. Burgos

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本文介绍了第一个功能中压阻抗测量单元的设计和实现,能够表征在现场的电源和负载阻抗的直流和交流网络(4160 V交流,6000 V直流,300 A,2.2 MVA)的频率范围从0.1 Hz-1 kHz。它包括三个电力电子构建模块,每个模块都使用SiC MOSFET H桥构建,具有很好的可重构性,并允许串联和并联扰动注入,以实现海军舰载电力系统的精确阻抗特性。凭借电力电子构建模块化概念的非凡优势以及SiC半导体提供的非常规功率处理优势,本文所示单元的开发无疑能够改进现有和设计未来稳定可靠的海军舰载电气平台,具有先进的电能发电和现代配电架构。
This paper describes the design and implementation of the first functional medium-voltage impedance measurement unit capable of characterizing in-situ source and load impedances of dc- and ac-networks (4160 V ac, 6000 V dc, 300 A, 2.2 MVA) in the frequency range from 0.1 Hz-1 kHz. It comprises three power electronics building blocks, each built using SiC MOSFET H-bridges, features great reconfigurability, and allows both series and shunt perturbation injection in order to achieve accurate impedance characterization of the Navy's shipboard power systems. With extraordinary advantages featured by the power electronics building block modular concept, and unconventional power processing benefits offered by SiC semiconductors, development of the unit shown in this paper unquestionably enables both, improvement of the existing, and design of the future, stable and reliable electrical Navy shipboard platforms with advanced electrical energy generation and modern distribution architecture.