Modular scalable medium-voltage impedance measurement unit using 10 kV SiC MOSFET PEBBs
Modular scalable medium-voltage impedance measurement unit using 10 kV SiC MOSFET PEBBs
复制标题
使用 10 kV SiC MOSFET PEBB 的模块化可扩展中压阻抗测量单元
DOI:
10.1109/ests.2015.7157913
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发表时间:
2015
期刊:
影响因子:
--
通讯作者:
R. Burgos
中科院分区:
文献类型:
--
作者:
I. Cvetkovic;Zhiyu Shen;M. Jakšić;C. Dimarino;Fang Chen;D. Boroyevich;R. Burgos
This paper describes the design and implementation of the first functional medium-voltage impedance measurement unit capable of characterizing in-situ source and load impedances of dc- and ac-networks (4160 V ac, 6000 V dc, 300 A, 2.2 MVA) in the frequency range from 0.1 Hz-1 kHz. It comprises three power electronics building blocks, each built using SiC MOSFET H-bridges, features great reconfigurability, and allows both series and shunt perturbation injection in order to achieve accurate impedance characterization of the Navy's shipboard power systems. With extraordinary advantages featured by the power electronics building block modular concept, and unconventional power processing benefits offered by SiC semiconductors, development of the unit shown in this paper unquestionably enables both, improvement of the existing, and design of the future, stable and reliable electrical Navy shipboard platforms with advanced electrical energy generation and modern distribution architecture.