Effects of Total Ionizing Dose on Bipolar Junction Transistor
Effects of Total Ionizing Dose on Bipolar Junction Transistor
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DOI：
10.3844/ajassp.2010.807.810
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发表时间：
2010-06
期刊：
影响因子：
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通讯作者：
C. Pien;H. F. A. Amir;S. Salleh;Azali Muhammad
中科院分区：
文献类型：
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作者：
C. Pien;H. F. A. Amir;S. Salleh;Azali Muhammad
问题陈述：双极结型晶体管（BJT）器件在其生命周期中遇到的电离辐射量会降低其功能和电气参数性能。空间、高能物理实验、核环境或制造过程以及标准地面操作中的不同辐射环境对设备具有影响。方法：在这项研究中，电离辐射的影响，介绍了商用现成（COTS）NPN BJT的60 Co γ（？）射线已经执行。结果：观察到BJT暴露于60 Co引起电离辐射损伤。电离辐射损伤主要是由于在绝缘层表面或界面附近俘获的过量电荷引起的。这种现象降低了少数载流子寿命，从而导致BJT的电流增益降低。结论：发现这种电离辐射效应会引起器械的永久性或暂时性损伤，具体取决于其电流驱动以及所吸收的总电离剂量（TID）。在这项研究中的性能和退化的选定的BJT器件在辐照期间相对于总剂量60钴。
Problem statement: The amount of ionizing radiation that Bipolar Junction Transistor (BJT) devices encounter during their lifecycle degrades both of their functional and electrical parameter performances. The different radiation environments either in space, high energy physics experiments, nuclear environment or fabrication process as well as for standard terrestrial operation possess an impact on the devices. Approach: In this research, analytical studies of the effects of ionizing radiation introduced in Commercial-Off-The Shelf (COTS) NPN BJTs by 60Co gamma (?) rays had been performed. Results: It was observed that exposure of BJTs to 60Co caused ionizing radiation damage. Ionizing radiation damage was caused mainly by excess charges trapped on or near the surfaces of their insulating layers and interfaces. This phenomenon reduced the minority carrier lifetime and thus, leading to a decrease in the current gain of the BJTs. Conclusion: This ionizing radiation effect was found to arouse either a permanent or temporarily damage in the devices depending on their current drives and also the Total Ionizing Dose (TID) absorbed. The performance and degradation of selected BJT devices during irradiation with respect to total dose 60Co were presented in this study.