Thermally induced spin transport in two-dimensional ferromagnetic gapped graphene
Thermally induced spin transport in two-dimensional ferromagnetic gapped graphene
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DOI：
10.1209/0295-5075/101/57008
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发表时间：
2013-03
期刊：
影响因子：
--
通讯作者：
Z. Niu
中科院分区：
文献类型：
--
作者：
Z. Niu
We investigate thermally induced spin currents through a two-dimensional normal/ferromagnetic/normal graphene (NG/FG/NG) junction with an energy gap in the FG. By applying temperature difference between two NG electrodes, spin-up and spin-down currents flowing in opposite directions cancel each other out, resulting in pure spin currents. These currents can be modulated by adjusting the gate voltage V g and the Fermi energy and can flow in the same direction. For nonzero V g fully polarized currents can be observed. When the NG/FG/NG junction is extended to a NG/FG/NG/FG/NG structure a large thermal magnetoresistance is obtained. These devices can be realized with current technologies and may have practical use in spin caloritronics and quantum information.
