Silicon Based GeSn p-i-n Photodetector for SWIR Detection
Silicon Based GeSn p-i-n Photodetector for SWIR Detection
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用于 SWIR 检测的硅基 GeSn p-i-n 光电探测器
DOI：
10.1109/jphot.2016.2607687
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发表时间：
2016-10-01
影响因子：
2.4
通讯作者：
Wang, Qiming
中科院分区：
文献类型：
--
作者：
Cong, Hui;Xue, Chunlai;Wang, Qiming
报道了用分子束外延技术在n型Si(100)衬底上生长具有Ge0.92Sn0.08有源层的GeSn基p-i-n光电探测器的研究。该探测器实现了宽带探测，截止波长可达2.3μm，在1V的反向偏压下，室温下器件的响应度为93 mA，暗电流为171μA，响应波长接近2.0μm。这项工作为研制硅基短波红外(SWIR)光电探测器提供了一种很有前途的技术。
We reported an investigation of GeSn-based p-i-n photodetectors (PDs) with a Ge0.92Sn0.08 active layer grown on n-type Si (100) substrate using molecular beam epitaxy (MBE). The GeSn photodetector achieved a wide spectrum detection whose cutoff wavelength can reach to 2.3 μm. The PDs exhibited a high performance near 2.0 μm with a responsivity of 93 mA/W and a dark current of 171 μA under a reverse bias of 1 V at room temperature. This work represented a promising technology to develop Si-based short-wave infrared (SWIR) photodetectors.