Transport Coefficients of InAs Nanowires as a Function of Diameter
Transport Coefficients of InAs Nanowires as a Function of Diameter
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DOI：
10.1002/smll.200800969
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发表时间：
2009-01-01
期刊：
影响因子：
13.3
通讯作者：
Wang, Deli
中科院分区：
文献类型：
--
作者：
Dayeh, Shadi A.;Yu, Edward T.;Wang, Deli
InAs纳米线（NWs）由于其在未来高速纳米电子器件中的潜力，近年来在合成[1-3]和传输[4-6]研究中得到了广泛的研究。采用Back-，[7] -,[6,8]和包裹栅[9]NW场效应晶体管（nwfet）研究了室温下InAs NWs的低场输运特性。其中，界面态对FET特性和参数提取的电容性影响、[10]和InAs NWs[11]的场相关输运特性最近在顶栅几何上进行了研究。利用导电原子力显微镜，已经确定了InAs NWs中通道长度缩放和从扩散到弹道载流子输运转变的影响另一方面，缺乏系统的实验表征和详细的分析通道宽度缩放和通道维数对NWs输运性质的影响。在此，我们提出了一种综合的方法来提取NWs中的输运系数，作为其直径和垂直（栅极）和横向（漏极）场的函数，从而由于它们的场依赖性而实现一致的比较这种提取技术扩展了早期关于NWs输运性质随其直径变化的研究，这可以归因于1)载流子浓度（Si NWs）的变化或2)载流子迁移率（GaN NWs）的变化一维（1D） Schrö丁格尔-泊松自一致解与我们实验中使用的材料结构相似，但具有不同的InAs厚度，以验证我们的实验观察和分析。
InAs nanowires (NWs) have been the subject of intensive research recently in both synthesis [1–3] and transport [4–6] studies due to their potential for future high-speed nanoelectronic devices. Back-,[7] top-,[6, 8] and wrap-gate [9] NW fieldeffect transistors (NWFETs) have been employed to study the low-field transport properties of InAs NWs at room temperature. Among these properties, the capacitive effects of interface states on FET characteristics and parameter extraction,[10] and the field-dependent transport properties in InAs NWs [11] have been explored by us recently in the topgate geometry. Using conductive atomic force microscopy, the effects of channel-length scaling [12] and the transition from diffusive to ballistic carrier transport in InAs NWs has been identified.[13] On the other hand, systematic experimental characterization and detailed analysis of the effects of channelwidth scaling and channel dimensionality on the transport properties in NWs are still lacking. Herein, we present a comprehensive method to extract the transport coefficients in NWs as functions of their diameter and vertical (gate) and lateral (drain) fields, thus enabling consistent comparison due to their field dependence.[11] This extraction technique extends earlier studies on the variation of transport properties in NWs as functions of their diameter, which was attributed to either 1) only changes in carrier concentration (Si NWs)[14] or 2) only changes in carrier mobility (GaN NWs).[15] One-dimensional (1D) Schrö dinger–Poisson self-consistent solutions for a material structure similar to that used in our experiments, but with different InAs thicknesses, was performed to validate our experimental observations and analysis.