Impedance Analysis on Hydrogen Interaction with Pt-AlGaN/GaN Schottky Barrier Diodes
Impedance Analysis on Hydrogen Interaction with Pt-AlGaN/GaN Schottky Barrier Diodes
复制标题
氢与 Pt-AlGaN/GaN 肖特基势垒二极管相互作用的阻抗分析
DOI：
10.1149/2.0041411eel
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发表时间：
2014
影响因子：
--
通讯作者：
Yoshihiro Irokawa
中科院分区：
文献类型：
--
作者：
K.Shinbo;H.Ishikawa;M.Iwasaki;A.Uno;Y.Ohdaira;A.Baba;K.Kato and F.Kaneko;Yoshihiro Irokawa
使用电化学阻抗谱在不同温度下研究了氢与 Pt-AlGaN/GaN 肖特基势垒二极管的相互作用。结果，首次发现将二极管暴露于氢中不会在代表氢感应双电层的奈奎斯特平面上产生额外的RC电路，并且代表半导体空间电荷区的RC电路的现有半圆的半径在氢暴露后显着减小。这一结果意味着氢可能不会在 Pt-AlGaN 界面处形成双电层，但会改变半导体空间电荷区的性质。
The interaction of hydrogen with Pt–AlGaN/GaN Schottky barrier diodes has been investigated at various temperatures using electrochemical impedance spectroscopy. As a result, it is first found that exposure of the diodes to hydrogen does not create an additional RC circuit on the Nyquist plane which represents hydrogen-induced electric double layer, and the radius of the existing semicircle representing the RC circuit for semiconductor space charge region is dramatically reduced upon hydrogen exposure. This result implies that hydrogen may not create electric double layer at the Pt-AlGaN interface but change the property of the semiconductor space charge region.