High-Quality B-Doped Homoepitaxial Diamond Films using Trimethylboron
High-Quality B-Doped Homoepitaxial Diamond Films using Trimethylboron
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使用三甲基硼的高质量 B 掺杂同质外延金刚石薄膜
DOI：
10.1143/jjap.37.l1129
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发表时间：
1998
影响因子：
1.5
通讯作者：
K. Kajimura
中科院分区：
文献类型：
--
作者：
S. Yamanaka;H. Watanabe;S. Masai;D. Takeuchi;H. Okushi;K. Kajimura
使用由 CH4、H2 和经 H2 气体稀释的三甲基硼 B(CH3)3 组成的混合物，通过微波等离子体化学气相沉积 (CVD) 合成了高质量的 B 掺杂同质外延金刚石薄膜。这些薄膜是基于在清洁的CVD系统中生长高质量金刚石薄膜的方法而获得的。霍尔效应测量表明，室温（290 K）下，当空穴浓度为2.3×1014 cm-3时，霍尔迁移率超过约1800 cm2/V·s；在170 K时，霍尔迁移率超过约3300 cm2/V·s。这些结果表明，现有B掺杂CVD薄膜的质量与高质量天然金刚石相当或更好。
High-quality B-doped homoepitaxial diamond films have been synthesized by microwave plasma chemical-vapor-deposition (CVD) using a mixture consisting of CH4, H2, and trimethylboron B(CH3)3 diluted by H2 gas. These films have been obtained on the basis of the approach that high-quality diamond films should be grown in a clean CVD system. Hall-effect measurements of the film show that the Hall mobility exceeds about 1800 cm2/V·s when the hole concentration is 2.3×1014 cm-3 at room temperature (290 K) and about 3300 cm2/V·s at 170 K. These results indicate that the quality of the present B-doped CVD films is comparable with or better than that of high-quality natural diamonds.