Charge states and quantitative infrared spectroscopy of electrically active oxygen centers in gallium arsenide
Charge states and quantitative infrared spectroscopy of electrically active oxygen centers in gallium arsenide
复制标题
砷化镓中电活性氧中心的电荷态和定量红外光谱
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
U. Kretzer
中科院分区：
文献类型：
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作者：
H. Alt;Y. Gomeniuk;U. Kretzer
用傅里叶变换红外光谱对掺氧砷化镓晶体进行了研究。费米能级低于导带约0.4 eV的样品在热平衡条件下表现出电活性氧OOC的两个稳定态，由730和715 cm−1的相关局域振动模式光学识别。根据材料补偿中心的分析和比较霍尔测量，电荷态+1和−1分别归属于这两个带。这一结果支持最近提出的OOC缺陷的(ASGA)2-OAS(两个砷反位和一个偏心替代氧原子)微观模型，而与早期的孤立OAS模型不一致。利用光诱导转换实验对该中心的定量光学光谱进行了系统的研究，证实了这两个谱带的吸收强度相差15%。建议的定标因子为3.6x1016 cm−1。
Oxygen-doped gallium arsenide crystals have been investigated by Fourier transform infrared spectroscopy. Samples with the Fermi level at about 0.4eV below the conduction band exhibit under thermal equilibrium conditions both stable states of electrically active oxygen Ooc, identified optically by the associated local vibrational modes at 730 and 715cm−1. Based on the analysis of compensating centers in the material and comparative Hall measurements, the charge states +1 and −1, respectively, are assigned to these bands. This result favors the (AsGa)2–OAs (two arsenic antisites and one off-center substitutional oxygen atom) microscopic model for the Ooc defect, presented recently, and is in disagreement with the earlier isolated OAs models. Systematic investigations related to the quantitative optical spectroscopy of this center using optically induced conversion experiments confirm that the absorption strengths of the two bands differ by 15%. A calibration factor of 3.6×1016cm−1 is suggested for the band...