AlxGa1−xN/GaN heterostructures on a thin silicon-on-insulator substrate for metal–semiconductor–metal photodetectors
AlxGa1−xN/GaN heterostructures on a thin silicon-on-insulator substrate for metal–semiconductor–metal photodetectors
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DOI：
10.1088/0022-3727/44/36/365102
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发表时间：
2011-09
期刊：
影响因子：
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通讯作者：
V. K. Lin;S. Dolmanan;S. L. Teo;H. Kim;E. Alarcón-Lladó;A. Dadgar;A. Krost;S. Tripathy
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文献类型：
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作者：
V. K. Lin;S. Dolmanan;S. L. Teo;H. Kim;E. Alarcón-Lladó;A. Dadgar;A. Krost;S. Tripathy
作者展示了基于二维电子气 (2DEG) 的 AlxGa1−xN/GaN 异质结构在薄绝缘体上硅 (SOI) 衬底上的外延生长。进行截面透射电子显微镜、高分辨率 X 射线衍射、光致发光、原子力显微镜和紫外 (UV) 显微拉曼光谱测量，以解决此类硅基复合基板上外延层的结构和界面特性。对肖特基金属-半导体-金属紫外光电探测器进行器件处理，以测试 GaN/SOI 模板上如此薄的 AlxGa1−xN 层对于紫外传感器的适用性。这种 2DEG AlxGa1−xN/GaN 异质结构在紫外光谱范围内的高灵敏度响应显示出与基于 SOI 的电子和光子学集成的巨大潜力。
The authors demonstrate epitaxial growth of two-dimensional-electron-gas (2DEG)-based AlxGa1−xN/GaN heterostructures on a thin silicon-on-insulator (SOI) substrate. Cross-sectional transmission electron microscopy, high-resolution x-ray diffraction, photoluminescence, atomic force microscopy and ultraviolet (UV) micro-Raman spectroscopy measurements are performed to address the structural and interface properties of the epilayers on such a Si-based composite substrate. Device processing of Schottky metal–semiconductor–metal UV photodetectors is carried out to test the applicability of such a thin AlxGa1−xN layer on a GaN/SOI template for UV sensors. The high sensitivity response of such a 2DEG AlxGa1−xN/GaN heterostructure in the UV spectral range shows high potential for integration with SOI-based electronics and photonics.