Thermal stability of W ohmic contacts to n‐type GaN
Thermal stability of W ohmic contacts to n‐type GaN
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W 欧姆接触与 n 型 GaN 的热稳定性
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
Yicheng Lu
中科院分区：
文献类型：
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作者：
M. Cole;D. Eckart;W. Han;R. Pfeffer;T. Monahan;F. Ren;C. Yuan;R. Stall;S. Pearton;Y. Li;Yicheng Lu
发现W对n+-GaN(n=1.5×1019 cm−3)的欧姆接触产生低的比接触电阻(n=1.5×1019 cm−3)，金属与半导体之间的有限反应高达1000 °C。β-W2N和W-N界面相的形成被认为是在这些温度下观察到的电完整性的原因。薄的(500A)W触头表面即使在1000 °C，1min的退火后也没有观察到Ga的外扩散。因此，在高温应用中，W似乎是n+-GaN的稳定接触。
W was found to produce low specific contact resistance (ρc∼8.0×10−5 Ω cm2) ohmic contacts to n+‐GaN (n=1.5×1019 cm−3) with limited reaction between the metal and semiconductor up to 1000 °C. The formation of the β–W2N and W–N interfacial phases were deemed responsible for the electrical integrity observed at these annealing temperatures. No Ga out‐diffusion was observed on the surface of thin (500 A) W contacts even after 1000 °C, 1 min anneals. Thus, W appears to be a stable contact to n+‐GaN for high temperature applications.