Fabrication of Nanowires Using High-Energy Ion Beams
Fabrication of Nanowires Using High-Energy Ion Beams
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DOI：
10.1021/jp037638s
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发表时间：
2004-02
影响因子：
3.3
通讯作者：
S. Tsukuda;S. Seki;S. Tagawa;M. Sugimoto;A. Idesaki;Shigeru Tanaka;A. Oshima
中科院分区：
文献类型：
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作者：
S. Tsukuda;S. Seki;S. Tagawa;M. Sugimoto;A. Idesaki;Shigeru Tanaka;A. Oshima
讨论了利用重离子束沿沿着离子径迹的能量密度沉积在硅基聚合物薄膜中形成纳米线。聚合物沿着离子轨道的接枝导致交联，以产生具有可通过选择适当的离子束特性和聚合物材料控制的尺寸和数量密度的纳米线。离子轰击聚碳硅烷（PCS）、PCS-聚乙烯基硅烷共混聚合物和聚甲基苯基硅烷产生半径为7 - 30 nm的纳米线，这取决于离子束的类型。尺寸的差异被示出与交联反应的效率有关，考虑沉积的能量分布沿着的离子轨道。
Nanowire formation in Si-based polymer thin films using a heavy ion beam is discussed in terms of energy density deposition along ion tracks. Gelation of the polymer along the ion track results in cross-linking to produce nanowires with size and number density controllable by selecting appropriate ion beam characteristics and polymer materials. Ion bombardment of poly(carbosilane) (PCS), PCS−poly(vinylsilane) blend polymer, and poly(methylphenylsilane) produces nanowires with radii of 7−30 nm depending on the type of ion beam. The difference in size is shown to be related to the efficiency of the cross-linking reaction considering the deposited energy distribution along the ion tracks.