Strain Effects in YSZ Thin Films by Elastic Waves
Strain Effects in YSZ Thin Films by Elastic Waves
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弹性波对 YSZ 薄膜的应变效应
DOI：
10.1149/09101.1121ecst
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Iguchi Fumitada
中科院分区：
文献类型：
--
作者：
Miyoshi Yutaro;Iguchi Fumitada
实验证明，氧离子导体YSZ的直流电流随弹性波产生的应变的变化而增大。在炉外放置了一个压电致动器，用于将弹性波引入到炉内SiO_2棒上沉积的YSZ薄膜中。此外，还观察了在恒压作用下弹性波对YSZ薄膜直流电流行为的影响。在约630℃、1 Mpa的应力作用下，随着应变的增加，直流电流以1%的速率线性增加，这一结果被认为是由于YSZ的非对称应变效应造成的。观察到的应变效应表明，一种新技术的可能性可以利用弹性波来改善高温电化学设备的性能，如固体氧化物燃料电池和固体氧化物电解液。
The increase in direct current of yttria-stabilized zirconia (YSZ), which is an oxygen ionic conductor, by time-varying the strain produced by elastic waves was experimentally demonstrated. A piezo actuator was located outside of a furnace, and was used to introduce elastic waves into YSZ thin films deposited on a SiO2 bar in the furnace. Moreover, the effect of the elastic waves on the behavior of the direct current when constant voltage was applied to the YSZ films was observed. As strain increased, the direct current linearly increased at the rate of 1% for the stress application of 1 MPa at approximately 630 C. This result considered to be due to the asymmetric strain effects in YSZ. Observed strain effects suggested the possibility of a new technology that could use elastic waves to improve the performance of high-temperature electrochemical devices, such as solid oxide fuel cells and solid oxide electrolysers.