“The CMOS Inverter” as a Comparator in ADC Designs
“The CMOS Inverter” as a Comparator in ADC Designs
复制标题
“CMOS 反相器”作为 ADC 设计中的比较器
DOI：
--
复制
发表时间：
2004
期刊：
影响因子：
--
通讯作者：
Kyusun Choi
中科院分区：
文献类型：
--
作者：
A. Tangel;Kyusun Choi
本文介绍了一种单端无偏移抵消flash ADC架构，即“阈值逆变量化器”（TIQ）。TIQ基于CMOS逆变器单元，其中电压转移特性（VTC）通过系统的晶体管尺寸来改变。结果，显著提高了速度，减少了面积和功耗。采用2 μ标准CMOS n阱技术设计并制作了3位、4位和6位三种基于TIQ的flash ADC样品芯片。所提出的ADC单元适用于高速无线产品的片上系统（SoC）应用。
This paper introduces a single-ended non-offset-cancelled flash ADC architecture, the “Threshold Inverter Quantizer” (TIQ). The TIQ is based on a CMOS inverter cell, in which the voltage transfer characteristics (VTC) are changed by systematic transistor sizing. As a result, a significant improvement of speed and reduction of area and power consumption is achieved. A sample TIQ based flash ADC chip including 3-bit, 4-bit and 6-bit versions together has been designed and fabricated with the 2 μ standard CMOS n-well technology. The proposed ADC cells are suitable for System-on-Chip (SoC) applications in high speed wireless products.