Numerical investigation into the switchable diode effect in metal-ferroelectric-metal structures
Numerical investigation into the switchable diode effect in metal-ferroelectric-metal structures
复制标题
金属-铁电-金属结构中可开关二极管效应的数值研究
DOI：
10.1063/1.3624849
复制
发表时间：
2011-08-08
影响因子：
4
通讯作者：
Yang, Guo-Zhen
中科院分区：
文献类型：
--
作者：
Ge, Chen;Jin, Kui-Juan;Yang, Guo-Zhen
A self-consistent numerical model, particularly including the incomplete screening effect of metal electrodes, is introduced to reveal the mechanism of the switchable diode characteristics in metal/ferroelectric/metal structures. The calculated results are in good agreement with recent experimental data, theoretically demonstrating the important role played by the polarization-modulated barrier. Our calculations confirm that electrodes with a smaller permittivity, such as noble metals, are better choices to obtain a more pronounced switchable diode effect, and the barrier height variation as a function of the polarization will deviate from the linear relationship if the carrier concentration induced by the polarization becomes sufficiently high.
