Detection of nonradiative recombination centers in GaPN (N:0.105%) by below-gap excitation light
Detection of nonradiative recombination centers in GaPN (N:0.105%) by below-gap excitation light
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检测%20of%20nonradiative%20recombination%20centers%20in%20GaPN%20(N:0.105%)%20by%20below-gap%20excitation%20light
DOI：
10.1002/pssb.201900377
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
and H. Yaguchi
中科院分区：
文献类型：
--
作者：
S. Ferdous;N. Kamata;S. Yagi;and H. Yaguchi
研究通过中间带（IB）的级联光激发对提高IB型太阳能电池（IBSCs）的效率具有重要意义。增加GaP中氮(N)浓度会改变离散N - N对能级的集合，形成IB，并引入作为非辐射重组（NRR）中心的缺陷能级。在检测GaP1−xNx（x> 0.5%）中NRR中心的基础上，研究了低氮浓度0.105%区域的缺陷水平及其性质。通过将样品浸入液氮中消除温度猝灭，揭示了禁能隙内NRR中心的分布以及费米能量随隙上激发（AGE）密度的变化。深入了解IB和GaP1−xnx2的缺陷有助于对IBSCs进行适当的优化。
Investigation on cascade photo‐excitation via intermediate band (IB) is promising for improving the efficiency of IB‐type solar cells (IBSCs). Increasing nitrogen (N) concentration in GaP changes an ensemble of discrete N–N pair levels to form the IB as well as introducing defect levels acting as nonradiative recombination (NRR) centers. In continuation of detecting NRR centers in GaP1−xNx(x> 0.5%), a study is made for the lower N concentration region of 0.105% to understand an original formation of defect levels and their properties. Elimination of temperature quenching by immersing the sample into liquid nitrogen reveals a distribution of NRR centers inside the forbidden energy gap and the shift of Fermi energy depending on above‐gap excitation (AGE) density. Profound understanding of IB and defects of GaP1−xNxleads to a proper optimization of IBSCs.