Temperature compensation of piezoresistive micro-machined porous silico n pressure sensor by ANN
Temperature compensation of piezoresistive micro-machined porous silico n pressure sensor by ANN
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DOI：
10.1016/j.microrel.2005.04.008
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发表时间：
2006-02-01
影响因子：
1.6
通讯作者：
Saha, H
中科院分区：
文献类型：
--
作者：
Pramanik, C;Islam, T;Saha, H
制作了多孔硅基微机械压阻式压力传感器，并在0-1bar和25-80℃的温度范围内进行了测试，研究了压力灵敏度与环境温度变化的关系。提出了一种基于人工神经网络技术的智能在线温度补偿方案。与未补偿的温度值相比，该方案的误差减小了约98%。文中还给出了采用微控制器的硬件实现方案。(C)2005爱思唯尔有限公司。保留所有权利。
Porous silicon based micro-machined peizoresistive pressure sensors are fabricated and tested in the range of 0-1 bar and temperature range of 25-80 degrees C. The dependence of pressure sensitivity on the variation of ambient temperature is investigated. An intelligent online temperature compensation scheme using ANN technique has been described. The proposed scheme leads to an error reduction of approximately 98% from temperature uncompensated value. A hardware implementation of the proposed scheme using micro-controller is also described. (c) 2005 Elsevier Ltd. All rights reserved.