Organic Complementary Inverter Circuits Fabricated with Reverse Offset Printing
Organic Complementary Inverter Circuits Fabricated with Reverse Offset Printing
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DOI：
10.1002/aelm.201700313
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发表时间：
2018-01
影响因子：
6.2
通讯作者：
Yasunori Takeda;Yudai Yoshimura;Rei Shiwaku;Kazuma Hayasaka;Tomohito Sekine;Tomoko Okamoto;H. Matsui;D. Kumaki;Yoshinori Katayama;S. Tokito
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文献类型：
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作者：
Yasunori Takeda;Yudai Yoshimura;Rei Shiwaku;Kazuma Hayasaka;Tomohito Sekine;Tomoko Okamoto;H. Matsui;D. Kumaki;Yoshinori Katayama;S. Tokito
p型和n型有机薄膜晶体管（OTFT）以及具有精细图案电极的互补逆变器电路通过反向胶印制造。在优化的印刷条件下，电极的通道长度可达到小于 3 µm。使用这些电极和印刷的 p 型和 n 型有机半导体制造高性能 OTFT，每个半导体在沟道长度为 50 µm 时实现 0.2 cm2 V−1 s−1 的迁移率。使用反向胶印展示了采用堆叠 OTFT 结构制造的互补反相器电路。反相器电路成功地在低至 2.5 V 的电源电压下工作，信号增益高达 14。这些结果预计将对使用 OTFT 进行高速操作的集成电路的开发做出巨大贡献。
p‐Type and n‐type organic thin film transistors (OTFTs) and complementary inverter circuits with finely patterned electrodes are fabricated by reverse offset printing. The electrodes achieve a channel length of less than 3 µm under optimized printing conditions. High‐performance OTFTs are fabricated using these electrodes and printed p‐type and n‐type organic semiconductors, each achieving a mobility of 0.2 cm2 V−1 s−1 at a channel length of 50 µm. A complementary inverter circuit fabricated with a stacked OTFT structure is demonstrated using reverse offset printing. The inverter circuits successfully operate at a supply voltage as low as 2.5 V with a high signal gain of 14. These results are expected to contribute greatly to the development of integrated circuits with high‐speed operation using OTFTs.