Alternative Magnesium Calcium Oxide Gate Dielectric for Silicon Carbide MOS Application
Alternative Magnesium Calcium Oxide Gate Dielectric for Silicon Carbide MOS Application
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用于碳化硅 MOS 应用的替代镁钙氧化物栅极电介质
DOI：
10.1557/proc-0911-b14-03
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
F. Ren
中科院分区：
文献类型：
--
作者：
D. Stodilka;A. Gerger;M. Hlad;Purushottam Kumar;B. Gila;R. Singh;C. Abernathy;S. Pearton;F. Ren
采用气源分子束外延技术，在6H-碳化硅衬底上以介质的形式低温生长了氧化镁和氧化镁三元系薄膜。在300℃和400℃下生长的氧化镁在碳化硅(0001)面上沿(111)晶面织构。生长出了晶格失配最小、均方根粗糙度为0.5 nm的固溶体Mg.75Ca.25O三元晶体。在UV-臭氧中对碳化硅进行处理，减少了碳化硅表面的碳污染物，但增加了氧化物/碳化硅界面的固定氧化物电荷。在300℃下生长的Mg.75Ca.25O三元材料获得了3.5 mV cm-1的击穿电场和1011 cm-2 eV-1量级的低界面态密度。这些氧化物首次作为SiO_2栅电介质的低温替代品应用于SiCMOS。
Films of MgO and MgCaO ternaries were grown at low temperature as dielectrics on 6H-SiC by gas-source MBE. MgO grown at 300 and 400°C revealed crystallites textured toward the (111) orientation on SiC (0001). A solid-solution Mg.75Ca.25O ternary was grown having a minimal lattice mismatch and low root mean square (RMS) roughness of 0.5 nm. SiC pretreatments in UV-ozone reduced carbon contaminants on the surface of SiC, but resulted in the increase of fixed oxide charge in the oxide/SiC interface. Electrical breakdown fields >3.5 MV cm -1 and low density of interface states on the order of 1011 cm-2eV-1 were achieved for a Mg.75Ca.25O ternary grown at 300°C. These oxides are presented for the first time as low temperature alternatives to SiO 2 gate dielectrics for SiC MOS applications.